SST/U401 – SST/U406
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
FEATURES
LOW DRIFT
│VGS1-2/T│= 10µV/ºC TYP.
LOW NOISE
en=6nV/Hz@10Hz TYP.
LOW PINCHOFF
VP=2.5V MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25 °C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor NOTE 1
SOIC
Top View
TO-71
Top View
-VGSS
Gate Voltage to Drain or Source
50V
-VDSO
Drain to Source Voltage
50V
-IG(f)
Gate Forward Current
10mA
Maximum Power Dissipation per side NOTE 2
Device Dissipation TA = 25°C
300mW
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
U401
U402
U403
U404
U405
│VGS1-2/T│max.
Drift vs. Temperature
10
10
25
25
40
U406 UNITS
80
µV/ºC
CONDITIONS
VDG = 10V, ID = 200µA
TA = -55ºC to +125ºC
│VGS1-2│max.
Offset Voltage
5
10
10
15
20
40
mV
VDG = 10V, ID = 200µA
ELECTRICAL CHARACTERISTICS TA = 25ºC (unless otherwise noted) NOTE 3
SYMBOL
CHARACTERISTIC
MIN.
TYP.
MAX.
UNITS
BVGSS
Breakdown Voltage
-50
-60
--
V
VDS= 0
ID= 1nA
Gate-to-Gate Breakdown
±50
--
--
V
IG= ±1µA
ID= 0,
IS = 0
f = 1kHz
BVG1G2
CONDITIONS
TRANSCONDUCTANCE
Gfss
Full Conduction
2000
--
7000
µS
VDG= 10V
VGS= 0
Gfs
Typical Operation
1000
--
2000
µS
VDG= 15V
ID= 200µA f = 1kHz
│Gfs1/Gfs2│
Mismatch
0.97
--
1.0
IDSS
Saturation Drain Current
0.5
--
10
IDSS1
IDSS2
Saturation Current Ratio
0.9
0.98
1.0
VDG= 10V
VGS= 0
mA
GATE VOLTAGE
VGS(off) or VP
Pinchoff Voltage
-0.5
--
-2.5
V
VDS= 15V
ID= 1nA
VGS
Operating Range
--
--
-2.3
V
VDS= 15V
ID= 200µA
IG
Operating
--
-4
-15
pA
VDG= 15V
ID= 200µA
IG
High Temperature
--
--
-10
nA
TA=+125ºC
IGSS
Gate Reverse Current
--
--
-100
pA
VGS=-30v, VDS= 0V
IG1G2
Gate to Gate Isolation Current
--
--
±1.0
µA
VG1-VG2= ±50V, ID= IS= 0
GATE CURRENT
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201123 07/24/2019 Rev#A9 ECN# SST/U401 SST/U406
SYMBOL
CHARACTERISTIC
MIN.
TYP.
MAX.
UNITS
CONDITIONS
OUTPUT CONDUCTANCE
GOSS
Full Conduction
--
--
40
µS
VDS= 10V,
VGS= 0V, f = 1kHz
GOS
Operating
--
2
2.7
µS
VDS= 15V,
ID= 200µA, f = 1kHz
95
--
--
dB
V DG2= 20V ID1= ID2=200µA
--
--
0.5
dB
VDS= 15V
VGS= 0
f= 100Hz
NBW= 6Hz
VDS= 15V
ID= 200µA f= 10Hz
COMMON MODE REJECTION
CMRR
V DG1= 10V
-20 log [(VGS1-VGS2)/ΔVDG1-2]
NOISE
NF
en
Figure
Voltage
--
6
20
nV/Hz
RG=10M
NBW= 1Hz
CAPACITANCE
CISS
Input
--
4
8
pF
CRSS
Reverse Transfer
--
1.5
3
pF
TO-78
TO-78
TO-71
TO-71
Six Lead
0.230
DIA.
0.209
0.195
DIA.
0.175
0.030
MAX.
0.150
0.210
0.115
0.170
6 LEADS
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
SOIC
0.200
2 3 4
1
5
8 76
2 3 4
5
6
1
8
7
0.100
0.029
0.045
0.050
0.046
0.036
0.335
0.370
0.016
0.019
DIM. A
0.100
45°
0.305
0.335
ID= 200µA f= 1MHz
P-DIP
0.500 MIN. 0.016
0.021
DIM. B
0.019 DIA.
0.016
VDS= 15V
0.100
45°
0.048
0.028
0.028
0.034
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. Derate 2.4mW/ºC when TA is greater than 25ºC
3. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear
Systems, founded in 1987, uses patented and proprissetary processes and designs to create its high performance discrete
semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide,
Intersil and Micro Power Systems by company founder John H. Hall.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201123 07/24/2019 Rev#A9 ECN# SST/U401 SST/U406
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